Plasma Etch Controller

Purpose

The Plasma Etch Controller skill provides comprehensive plasma etching process control for nanofabrication, enabling anisotropic pattern transfer with optimized selectivity, profile control, and minimal damage.

Capabilities

• Etch chemistry selection
• Anisotropy and selectivity optimization
• Endpoint detection
• Profile and sidewall angle control
• Loading effect compensation
• Plasma damage assessment

Usage Guidelines

Plasma Etch Process

1. Chemistry Selection

   • Match chemistry to material
   • Consider selectivity requirements
   • Address sidewall passivation

2. Profile Control

   • Optimize ion energy
   • Balance chemical and physical
   • Control sidewall angle

3. Endpoint Detection

   • Use OES for species monitoring
   • Apply interferometry
   • Implement time-based backup

Process Integration

• Nanolithography Process Development
• Nanodevice Integration Process Flow

Input Schema

{
  "material": "string",
  "mask_type": "string",
  "target_depth": "number (nm)",
  "feature_cd": "number (nm)",
  "selectivity_requirements": {
    "to_mask": "number",
    "to_underlayer": "number"
  }
}

Output Schema

{
  "etch_recipe": {
    "gases": [{"gas": "string", "flow": "number (sccm)"}],
    "pressure": "number (mTorr)",
    "rf_power": "number (W)",
    "bias_power": "number (W)"
  },
  "etch_rate": "number (nm/min)",
  "selectivity": {
    "to_mask": "number",
    "to_underlayer": "number"
  },
  "sidewall_angle": "number (degrees)",
  "uniformity": "number (%)"
}